TY - GEN
T1 - Radiation-Enhanced Multi-Level Cell Behavior in TaOx/NiO-based Resistive Random Access Memory
AU - Sari, Jesslyn Kartika
AU - Huang, Chien Yuan
AU - Chung, Chin Han
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - As a non-volatile memory (NVM), resistive random-access memory (RRAM) has been considered as one of the promising emerging devices to emulate the synaptic behavior and accelerate the computation of intelligent algorithms. In addition, compared to conventional NVMs, RRAM has the advantage of higher radiation tolerance and application prospects in space. In this work, the radiation effects on bilayer dielectric TaOx/NiO-based RRAM using 60Co γ-ray were investigated. Devices were irradiated up to a dose of 400 krad (Si) and exhibited changes in characteristics which might be caused by the increase of oxygen vacancies within the dielectric layers as a result of irradiation. The irradiated device also displayed an enhanced multi-level cell (MLC) behavior controllable under lower compliance currents, compared to pristine devices.
AB - As a non-volatile memory (NVM), resistive random-access memory (RRAM) has been considered as one of the promising emerging devices to emulate the synaptic behavior and accelerate the computation of intelligent algorithms. In addition, compared to conventional NVMs, RRAM has the advantage of higher radiation tolerance and application prospects in space. In this work, the radiation effects on bilayer dielectric TaOx/NiO-based RRAM using 60Co γ-ray were investigated. Devices were irradiated up to a dose of 400 krad (Si) and exhibited changes in characteristics which might be caused by the increase of oxygen vacancies within the dielectric layers as a result of irradiation. The irradiated device also displayed an enhanced multi-level cell (MLC) behavior controllable under lower compliance currents, compared to pristine devices.
KW - multi-level cell
KW - radiation effect
KW - reliability
KW - Resistive random access memory
KW - total ionizing dose
UR - http://www.scopus.com/inward/record.url?scp=85214904738&partnerID=8YFLogxK
U2 - 10.1109/RADECS59069.2023.10767028
DO - 10.1109/RADECS59069.2023.10767028
M3 - Conference contribution
AN - SCOPUS:85214904738
T3 - 2023 23rd European Conference on Radiation and Its Effects on Components and Systems, RADECS 2023 - Proceedings
BT - 2023 23rd European Conference on Radiation and Its Effects on Components and Systems, RADECS 2023 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 23rd European Conference on Radiation and Its Effects on Components and Systems, RADECS 2023
Y2 - 25 September 2023 through 29 September 2023
ER -