Rabi flopping of intersubband transitions in GaAs/AlGaAs MQWs

Chih-Wei Luo; K. Reimann; M. Woerner; T. Elsaesser; R. Hey; K. H. Ploog

doi:10.1109/QELS.2003.238387

Rabi flopping of intersubband transitions in GaAs/AlGaAs MQWs

Chih-Wei Luo, K. Reimann^*, M. Woerner, T. Elsaesser, R. Hey, K. H. Ploog

^*此作品的通信作者

電子物理學系

研究成果: Paper › 同行評審

3 引文斯高帕斯（Scopus）

摘要

Rabi flopping of intersubband transitions in n-type modulation-doped GaAs/AlGaAs multiple quantum wells is directly observed by electro-optic sampling of ultrashort THz transients with large electric-field amplitudes transmitted through the sample.

原文	English
DOIs	https://doi.org/10.1109/QELS.2003.238387
出版狀態	Published - 6月 2003
事件	Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS) - Baltimore, MD., 美國持續時間: 1 6月 2003 → 6 6月 2003

Conference

Conference	Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS)
國家/地區	美國
城市	Baltimore, MD.
期間	1/06/03 → 6/06/03

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10.1109/QELS.2003.238387

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@conference{1f3342e48e2f422fbee2475b16490b71,

title = "Rabi flopping of intersubband transitions in GaAs/AlGaAs MQWs",

abstract = "Rabi flopping of intersubband transitions in n-type modulation-doped GaAs/AlGaAs multiple quantum wells is directly observed by electro-optic sampling of ultrashort THz transients with large electric-field amplitudes transmitted through the sample.",

author = "Chih-Wei Luo and K. Reimann and M. Woerner and T. Elsaesser and R. Hey and Ploog, {K. H.}",

year = "2003",

month = jun,

doi = "10.1109/QELS.2003.238387",

language = "English",

note = "Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS) ; Conference date: 01-06-2003 Through 06-06-2003",

}

TY - CONF

T1 - Rabi flopping of intersubband transitions in GaAs/AlGaAs MQWs

AU - Luo, Chih-Wei

AU - Reimann, K.

AU - Woerner, M.

AU - Elsaesser, T.

AU - Hey, R.

AU - Ploog, K. H.

PY - 2003/6

Y1 - 2003/6

N2 - Rabi flopping of intersubband transitions in n-type modulation-doped GaAs/AlGaAs multiple quantum wells is directly observed by electro-optic sampling of ultrashort THz transients with large electric-field amplitudes transmitted through the sample.

AB - Rabi flopping of intersubband transitions in n-type modulation-doped GaAs/AlGaAs multiple quantum wells is directly observed by electro-optic sampling of ultrashort THz transients with large electric-field amplitudes transmitted through the sample.

UR - http://www.scopus.com/inward/record.url?scp=1542606436&partnerID=8YFLogxK

U2 - 10.1109/QELS.2003.238387

DO - 10.1109/QELS.2003.238387

M3 - Paper

AN - SCOPUS:1542606436

T2 - Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS)

Y2 - 1 June 2003 through 6 June 2003

ER -

Rabi flopping of intersubband transitions in GaAs/AlGaAs MQWs

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