Quasisuperlattice storage: A concept of multilevel charge storage

T. C. Chang; S. T. Yan; Po-Tsun Liu; C. W. Chen; H. H. Wu; S. M. Sze

doi:10.1063/1.1772873

Quasisuperlattice storage: A concept of multilevel charge storage

T. C. Chang^*, S. T. Yan, Po-Tsun Liu, C. W. Chen, H. H. Wu, S. M. Sze

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The use of a silicon/silicon nitride quasisuperlattice structure as a multilevel charge storage was investigated. The silicon and silicon nitride were used as the charge-trapping layers. The multilevel storage in the quasisuperlattice was found to be the reason of the memory effects. The utilization of the distinguishable charge storages, exhibited by the memory effects, as a memory device of 2 bit per cell was discussed. The Fowler-Nordhein (FN) tunneling was proposed for the 2 bit per cell operation.

原文	English
頁（從 - 到）	248-250
頁數	3
期刊	Applied Physics Letters
卷	85
發行號	2
DOIs	https://doi.org/10.1063/1.1772873
出版狀態	Published - 12 7月 2004

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abstract = "The use of a silicon/silicon nitride quasisuperlattice structure as a multilevel charge storage was investigated. The silicon and silicon nitride were used as the charge-trapping layers. The multilevel storage in the quasisuperlattice was found to be the reason of the memory effects. The utilization of the distinguishable charge storages, exhibited by the memory effects, as a memory device of 2 bit per cell was discussed. The Fowler-Nordhein (FN) tunneling was proposed for the 2 bit per cell operation.",

author = "Chang, {T. C.} and Yan, {S. T.} and Po-Tsun Liu and Chen, {C. W.} and Wu, {H. H.} and Sze, {S. M.}",

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T2 - A concept of multilevel charge storage

AU - Chang, T. C.

AU - Yan, S. T.

AU - Liu, Po-Tsun

AU - Chen, C. W.

AU - Wu, H. H.

AU - Sze, S. M.

PY - 2004/7/12

Y1 - 2004/7/12

N2 - The use of a silicon/silicon nitride quasisuperlattice structure as a multilevel charge storage was investigated. The silicon and silicon nitride were used as the charge-trapping layers. The multilevel storage in the quasisuperlattice was found to be the reason of the memory effects. The utilization of the distinguishable charge storages, exhibited by the memory effects, as a memory device of 2 bit per cell was discussed. The Fowler-Nordhein (FN) tunneling was proposed for the 2 bit per cell operation.

AB - The use of a silicon/silicon nitride quasisuperlattice structure as a multilevel charge storage was investigated. The silicon and silicon nitride were used as the charge-trapping layers. The multilevel storage in the quasisuperlattice was found to be the reason of the memory effects. The utilization of the distinguishable charge storages, exhibited by the memory effects, as a memory device of 2 bit per cell was discussed. The Fowler-Nordhein (FN) tunneling was proposed for the 2 bit per cell operation.

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DO - 10.1063/1.1772873

M3 - Article

AN - SCOPUS:3242886116

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VL - 85

SP - 248

EP - 250

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Quasisuperlattice storage: A concept of multilevel charge storage

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