Quasisuperlattice storage: A concept of multilevel charge storage

T. C. Chang*, S. T. Yan, Po-Tsun Liu, C. W. Chen, H. H. Wu, S. M. Sze

*此作品的通信作者

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

The use of a silicon/silicon nitride quasisuperlattice structure as a multilevel charge storage was investigated. The silicon and silicon nitride were used as the charge-trapping layers. The multilevel storage in the quasisuperlattice was found to be the reason of the memory effects. The utilization of the distinguishable charge storages, exhibited by the memory effects, as a memory device of 2 bit per cell was discussed. The Fowler-Nordhein (FN) tunneling was proposed for the 2 bit per cell operation.

原文English
頁(從 - 到)248-250
頁數3
期刊Applied Physics Letters
85
發行號2
DOIs
出版狀態Published - 12 7月 2004

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