Quasi-superlattice storage: A concept of multilevel charge storage

T. C. Chang*, S. T. Yan, Po-Tsun Liu, C. W. Chen, H. H. Wu, S. M. Sze

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

In this work, a novel concept of quasi-superlattice storage (QS 2) is demonstrated. Under a suitable operating voltage, two apparent states of charge storage can be distinguished. The memory effects are due to the multilevel charge storage within the quasi-superlattice. The multilevel charge storage provides a feasible design for the 2-bit-per-cell nonvolatile memory devices. Also, the leakage behavior of the quasi-superlattice structure has also been characterized by current-voltage measurements at room temperature and low temperatures. The resonant tunneling-like leakage characteristic is observed at low temperatures. A concise physical model is proposed to characterize the leakage mechanism of tunneling for the quasi-superlattice structure, and this suggests that consideration of the operating voltage for the 2-bit-per-cell nonvolatile memory device needs to be taken into account.

原文English
頁(從 - 到)G805-G808
頁數4
期刊Journal of the Electrochemical Society
151
發行號12
DOIs
出版狀態Published - 2004

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