TY - JOUR
T1 - Quasi-static analysis of X-band double-drift Lo-Hi-Lo silicon IMPATT diodes
AU - Chang, Mau-Chung
AU - Chen, Mao Chieh
PY - 1978/1/1
Y1 - 1978/1/1
N2 - A quasi-static scheme is used to study the dynamic properties and optimum operation conditions of the DD X-band Lo-Hi-Lo silicon IMPATT diodes. The carriers ionization rates in a form α = A exp s(— B/E) are assumed the scattering-limited velocities of the carriers and are taken at an operation temperature of 150°C, for the analysis of the diode. Large signal values of admittance, efficiency, power output and phase relationship between the avalanche current and the oscillation voltage are calculated as functions of the d.c. bias current, the r.f. voltago swing, and the operation frequency. Current-tuning effect is inferred to play an important role in the device design. Furthermore, efficiencies and power outputs of diodes are also calculated as functions of the avalanche-to-drift voltage ratio VA/VD. The best diode we propose is ŋ = 20.3% and P = 3.7 watts at 50% modulation near VA/VD = 0.88.
AB - A quasi-static scheme is used to study the dynamic properties and optimum operation conditions of the DD X-band Lo-Hi-Lo silicon IMPATT diodes. The carriers ionization rates in a form α = A exp s(— B/E) are assumed the scattering-limited velocities of the carriers and are taken at an operation temperature of 150°C, for the analysis of the diode. Large signal values of admittance, efficiency, power output and phase relationship between the avalanche current and the oscillation voltage are calculated as functions of the d.c. bias current, the r.f. voltago swing, and the operation frequency. Current-tuning effect is inferred to play an important role in the device design. Furthermore, efficiencies and power outputs of diodes are also calculated as functions of the avalanche-to-drift voltage ratio VA/VD. The best diode we propose is ŋ = 20.3% and P = 3.7 watts at 50% modulation near VA/VD = 0.88.
UR - http://www.scopus.com/inward/record.url?scp=0017995652&partnerID=8YFLogxK
U2 - 10.1080/00207217808900879
DO - 10.1080/00207217808900879
M3 - Article
AN - SCOPUS:0017995652
VL - 45
SP - 37
EP - 48
JO - International Journal of Electronics
JF - International Journal of Electronics
SN - 0020-7217
IS - 1
ER -