Quasi-resonant flyback DC/DC converter using GaN power transistors

Keyphrases

• Gallium Nitride 100%
• Power Transistors 100%
• Flyback DC-DC Converter 100%
• Quasi-resonant Flyback 100%
• Power Loss 40%
• Silicon-based 40%
• Turn-off Loss 40%
• Power Supply 20%
• Efficiency Improvement 20%
• Performance Improvement 20%
• MOSFET 20%
• Conduction Losses 20%
• Switching Frequency 20%
• Turn-off 20%
• GaN HEMT 20%
• Electric Characteristics 20%
• Switching Behavior 20%
• Efficiency Increase 20%
• On-resistance 20%
• Normally-off 20%
• Device Temperature 20%
• Switching Devices 20%
• Electric Power 20%
• Gate Charge 20%
• Power Converter 20%
• Power Electronics Applications 20%
• Quasi-resonant 20%
• Quasi-resonant Flyback Converter 20%

Engineering

• Nitride 100%
• DC-to-DC Converter 100%
• Power Loss 33%
• Power Supply 16%
• Metal-Oxide-Semiconductor Field-Effect Transistor 16%
• Conduction Loss 16%
• Switching Frequency 16%
• Performance Improvement 16%
• Gate Charge 16%
• Power Converter 16%
• Flyback Converter 16%
• Power Electronics 16%