Quasi-resonant flyback DC/DC converter using GaN power transistors

S. L. Jeng, M. T. Peng, C. Y. Hsu, Wei-Hua Chieng, Jet P.H. Shu

研究成果: Conference contribution同行評審

摘要

Quasi-resonant flyback converter is realized with the aim to demonstrate the topology feasibility using the normally-on switching behaviour of the gallium nitride (GaN) power transistor. Reference converters utilize GaN and silicon-based MOSET as the switching devices to compare the electric characteristics, and power losses. Quasi-resonant technology offers reduced turn-on losses, resulting in increased efficiency and lower device temperature. The turn-on losses dominate the power losses as the switching frequency of the power supply increases. The combined advantages of gate charge and on-resistance for GaN in the 60 watt reference converter leads to improve the turn-off conduction loss. GaN based power converter provides up to 7.02% improved efficiency over silicon based MOSFETs. The converter performance improvement opens the possibility of fully exploiting the wide advantages of GaN transistors in power electronic application.

原文English
主出版物標題26th Electric Vehicle Symposium 2012, EVS 2012
頁面2475-2481
頁數7
出版狀態Published - 2012
事件26th Electric Vehicle Symposium 2012, EVS 2012 - Los Angeles, CA, United States
持續時間: 6 5月 20129 5月 2012

出版系列

名字26th Electric Vehicle Symposium 2012, EVS 2012
4

Conference

Conference26th Electric Vehicle Symposium 2012, EVS 2012
國家/地區United States
城市Los Angeles, CA
期間6/05/129/05/12

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