@inproceedings{918c6cf7b7dc4074abfb256255449c7e,
title = "Quasi-resonant flyback DC/DC converter using GaN power transistors",
abstract = "Quasi-resonant flyback converter is realized with the aim to demonstrate the topology feasibility using the normally-on switching behaviour of the gallium nitride (GaN) power transistor. Reference converters utilize GaN and silicon-based MOSET as the switching devices to compare the electric characteristics, and power losses. Quasi-resonant technology offers reduced turn-on losses, resulting in increased efficiency and lower device temperature. The turn-on losses dominate the power losses as the switching frequency of the power supply increases. The combined advantages of gate charge and on-resistance for GaN in the 60 watt reference converter leads to improve the turn-off conduction loss. GaN based power converter provides up to 7.02% improved efficiency over silicon based MOSFETs. The converter performance improvement opens the possibility of fully exploiting the wide advantages of GaN transistors in power electronic application.",
keywords = "Flyback converter, GaN HEMT, Soft-switching",
author = "Jeng, {S. L.} and Peng, {M. T.} and Hsu, {C. Y.} and Wei-Hua Chieng and Shu, {Jet P.H.}",
year = "2012",
language = "English",
isbn = "9781622764211",
series = "26th Electric Vehicle Symposium 2012, EVS 2012",
pages = "2475--2481",
booktitle = "26th Electric Vehicle Symposium 2012, EVS 2012",
note = "26th Electric Vehicle Symposium 2012, EVS 2012 ; Conference date: 06-05-2012 Through 09-05-2012",
}