Quantum effect in oxide thickness determination from capacitance measurement

Kevin Yang; Ya Chin King; Chen-Ming Hu

doi:10.1109/VLSIT.1999.799348

Quantum effect in oxide thickness determination from capacitance measurement

Kevin Yang^*, Ya Chin King, Chen-Ming Hu

^*此作品的通信作者

國際半導體產業學院

研究成果: Conference article › 同行評審

118 引文斯高帕斯（Scopus）

摘要

Simple quantitative models of charge displacement due to quantum effect and its influence on gate oxide thickness measurements are presented. An effective oxide thickness (T_DC) is introduced which is relevant to MOSFET current modeling. Physical oxide thickness and T_DC can be extracted easily from capacitance measurement, and the electrical thickness can be predicted from a target physical thickness using these new models.

原文	English
頁（從 - 到）	77-78
頁數	2
期刊	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.1999.799348
出版狀態	Published - 1 12月 1999
事件	Proceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn 持續時間: 14 6月 1999 → 16 6月 1999

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10.1109/VLSIT.1999.799348

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title = "Quantum effect in oxide thickness determination from capacitance measurement",

abstract = "Simple quantitative models of charge displacement due to quantum effect and its influence on gate oxide thickness measurements are presented. An effective oxide thickness (TDC) is introduced which is relevant to MOSFET current modeling. Physical oxide thickness and TDC can be extracted easily from capacitance measurement, and the electrical thickness can be predicted from a target physical thickness using these new models.",

author = "Kevin Yang and King, {Ya Chin} and Chen-Ming Hu",

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AU - Yang, Kevin

AU - King, Ya Chin

AU - Hu, Chen-Ming

PY - 1999/12/1

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N2 - Simple quantitative models of charge displacement due to quantum effect and its influence on gate oxide thickness measurements are presented. An effective oxide thickness (TDC) is introduced which is relevant to MOSFET current modeling. Physical oxide thickness and TDC can be extracted easily from capacitance measurement, and the electrical thickness can be predicted from a target physical thickness using these new models.

AB - Simple quantitative models of charge displacement due to quantum effect and its influence on gate oxide thickness measurements are presented. An effective oxide thickness (TDC) is introduced which is relevant to MOSFET current modeling. Physical oxide thickness and TDC can be extracted easily from capacitance measurement, and the electrical thickness can be predicted from a target physical thickness using these new models.

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U2 - 10.1109/VLSIT.1999.799348

DO - 10.1109/VLSIT.1999.799348

M3 - Conference article

AN - SCOPUS:0033281224

SN - 0743-1562

SP - 77

EP - 78

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

T2 - Proceedings of the 1999 Symposium on VLSI Technology

Y2 - 14 June 1999 through 16 June 1999

ER -

Quantum effect in oxide thickness determination from capacitance measurement

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