Quantum-dot surface emitting distributed feedback lasers using indium-tin-oxide as top claddings

Ting Yuan Chang; Chien-Hung Pan; Kuo Bin Hong; Chien Hung Lin; Kuo-Jui Lin; Chien-Ping Lee; Tien-Chang Lu

doi:10.1109/LPT.2016.2562142

Quantum-dot surface emitting distributed feedback lasers using indium-tin-oxide as top claddings

Ting Yuan Chang, Chien-Hung Pan, Kuo Bin Hong, Chien Hung Lin, Kuo-Jui Lin, Chien-Ping Lee, Tien-Chang Lu^*

^*此作品的通信作者

研究成果: Article › 同行評審

17 引文斯高帕斯（Scopus）

摘要

We demonstrate InAs/InGaAs quantum-dot surface emitting distributed feedback (SE-DFB) lasers, using an indium-tin-oxide layer as top cladding, which eliminates the regrowth process used in conventional DFB lasers to greatly simplify laser process. The lasing peak near 1.30 μm realized using the grating period of 375 nm exhibited a 0.13-nm linewidth and a low-temperature red-shift rate of 0.1 nm/K. The laser had a threshold current density of 210 A/cm ² and a characteristic temperature of 94.6 K. The surface emitting laser light had the divergence angles of less than 1° and 8° ∼ 9° along and perpendicular to the grating direction, respectively.

原文	English
文章編號	7465729
頁（從 - 到）	1633-1636
頁數	4
期刊	IEEE Photonics Technology Letters
卷	28
發行號	15
DOIs	https://doi.org/10.1109/LPT.2016.2562142
出版狀態	Published - 1 8月 2016

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10.1109/LPT.2016.2562142

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title = "Quantum-dot surface emitting distributed feedback lasers using indium-tin-oxide as top claddings",

abstract = " We demonstrate InAs/InGaAs quantum-dot surface emitting distributed feedback (SE-DFB) lasers, using an indium-tin-oxide layer as top cladding, which eliminates the regrowth process used in conventional DFB lasers to greatly simplify laser process. The lasing peak near 1.30 μm realized using the grating period of 375 nm exhibited a 0.13-nm linewidth and a low-temperature red-shift rate of 0.1 nm/K. The laser had a threshold current density of 210 A/cm 2 and a characteristic temperature of 94.6 K. The surface emitting laser light had the divergence angles of less than 1° and 8° ∼ 9° along and perpendicular to the grating direction, respectively. ",

keywords = "Distributed feedback lasers, ITO, Quantum dots, Surface emitting lasers",

author = "Chang, {Ting Yuan} and Chien-Hung Pan and Hong, {Kuo Bin} and Lin, {Chien Hung} and Kuo-Jui Lin and Chien-Ping Lee and Tien-Chang Lu",

note = "Publisher Copyright: {\textcopyright} 1989-2012 IEEE.",

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AU - Chang, Ting Yuan

AU - Pan, Chien-Hung

AU - Hong, Kuo Bin

AU - Lin, Chien Hung

AU - Lin, Kuo-Jui

AU - Lee, Chien-Ping

AU - Lu, Tien-Chang

PY - 2016/8/1

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N2 - We demonstrate InAs/InGaAs quantum-dot surface emitting distributed feedback (SE-DFB) lasers, using an indium-tin-oxide layer as top cladding, which eliminates the regrowth process used in conventional DFB lasers to greatly simplify laser process. The lasing peak near 1.30 μm realized using the grating period of 375 nm exhibited a 0.13-nm linewidth and a low-temperature red-shift rate of 0.1 nm/K. The laser had a threshold current density of 210 A/cm 2 and a characteristic temperature of 94.6 K. The surface emitting laser light had the divergence angles of less than 1° and 8° ∼ 9° along and perpendicular to the grating direction, respectively.

AB - We demonstrate InAs/InGaAs quantum-dot surface emitting distributed feedback (SE-DFB) lasers, using an indium-tin-oxide layer as top cladding, which eliminates the regrowth process used in conventional DFB lasers to greatly simplify laser process. The lasing peak near 1.30 μm realized using the grating period of 375 nm exhibited a 0.13-nm linewidth and a low-temperature red-shift rate of 0.1 nm/K. The laser had a threshold current density of 210 A/cm 2 and a characteristic temperature of 94.6 K. The surface emitting laser light had the divergence angles of less than 1° and 8° ∼ 9° along and perpendicular to the grating direction, respectively.

KW - Distributed feedback lasers

KW - ITO

KW - Quantum dots

KW - Surface emitting lasers

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Quantum-dot surface emitting distributed feedback lasers using indium-tin-oxide as top claddings

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