Quantum-dot surface emitting distributed feedback lasers using indium-tin-oxide as top claddings

Ting Yuan Chang, Chien-Hung Pan, Kuo Bin Hong, Chien Hung Lin, Kuo-Jui Lin, Chien-Ping Lee, Tien-Chang Lu*

*此作品的通信作者

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

We demonstrate InAs/InGaAs quantum-dot surface emitting distributed feedback (SE-DFB) lasers, using an indium-tin-oxide layer as top cladding, which eliminates the regrowth process used in conventional DFB lasers to greatly simplify laser process. The lasing peak near 1.30 μm realized using the grating period of 375 nm exhibited a 0.13-nm linewidth and a low-temperature red-shift rate of 0.1 nm/K. The laser had a threshold current density of 210 A/cm 2 and a characteristic temperature of 94.6 K. The surface emitting laser light had the divergence angles of less than 1° and 8° ∼ 9° along and perpendicular to the grating direction, respectively.

原文English
文章編號7465729
頁(從 - 到)1633-1636
頁數4
期刊IEEE Photonics Technology Letters
28
發行號15
DOIs
出版狀態Published - 1 8月 2016

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