Quantum confinement effect in short-channel gate-all-around MOSFETs and its impact on the sensitivity of threshold voltage to process variations

Yu Sheng Wu*, Pin Su

*此作品的通信作者

    研究成果: Conference contribution同行評審

    5 引文 斯高帕斯(Scopus)

    摘要

    We have proposed an analytical model for quantum confinement effects in short-channel Gate-All-Around (GAA) MOSFETs. This model accurately predicts the eigen-energy shift and eigen-function modulation caused by the short channel effects in lightly doped GAA devices. It shows that the threshold voltage (Vth) variation due to channel diameter variation is larger than that due to channel length variation because of the significant quantum confinement in ultra-scaled devices. Our model indicates that the channel diameter of GAA MOSFETs can be optimized to reduce the Vth variation.

    原文English
    主出版物標題2009 IEEE International SOI Conference
    DOIs
    出版狀態Published - 28 12月 2009
    事件2009 IEEE International SOI Conference - Foster City, CA, 美國
    持續時間: 5 10月 20098 10月 2009

    出版系列

    名字Proceedings - IEEE International SOI Conference
    ISSN(列印)1078-621X

    Conference

    Conference2009 IEEE International SOI Conference
    國家/地區美國
    城市Foster City, CA
    期間5/10/098/10/09

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