A quantitative breakdown model for thin gate and tunneling oxides based on the physical understanding of oxide breakdown has been developed. Using the model, it is found that longt//B//D of constant voltage stress should be extrapolated according to 1/E//O//X, instead of E//O//X, as widely assumed. It is also found that the charge-to-breakdown Q//B//D is closely related to the hole generation rate alpha . With the help of this model, the correlations among the widely used reliability tests can be readily obtained. One specific example between the constant-voltage and the ramp-voltage stress has been demonstrated, and it is suggested that the ramp-voltage stress can be used to replace the constant-voltage stress provided a conversion diagram is available. A simplified analytical expression for the conversion formula is also provided.
|頁（從 - 到）||24-31|
|期刊||Annual Proceedings - Reliability Physics (Symposium)|
|出版狀態||Published - 1 12月 1985|