TY - JOUR

T1 - QUANTITATIVE PHYSICAL MODEL FOR TIME-DEPENDENT BREAKDOWN IN SiO//2.

AU - Chen, I. C.

AU - Holland, S.

AU - Hu, Chen-Ming

PY - 1985/12/1

Y1 - 1985/12/1

N2 - A quantitative breakdown model for thin gate and tunneling oxides based on the physical understanding of oxide breakdown has been developed. Using the model, it is found that longt//B//D of constant voltage stress should be extrapolated according to 1/E//O//X, instead of E//O//X, as widely assumed. It is also found that the charge-to-breakdown Q//B//D is closely related to the hole generation rate alpha . With the help of this model, the correlations among the widely used reliability tests can be readily obtained. One specific example between the constant-voltage and the ramp-voltage stress has been demonstrated, and it is suggested that the ramp-voltage stress can be used to replace the constant-voltage stress provided a conversion diagram is available. A simplified analytical expression for the conversion formula is also provided.

AB - A quantitative breakdown model for thin gate and tunneling oxides based on the physical understanding of oxide breakdown has been developed. Using the model, it is found that longt//B//D of constant voltage stress should be extrapolated according to 1/E//O//X, instead of E//O//X, as widely assumed. It is also found that the charge-to-breakdown Q//B//D is closely related to the hole generation rate alpha . With the help of this model, the correlations among the widely used reliability tests can be readily obtained. One specific example between the constant-voltage and the ramp-voltage stress has been demonstrated, and it is suggested that the ramp-voltage stress can be used to replace the constant-voltage stress provided a conversion diagram is available. A simplified analytical expression for the conversion formula is also provided.

UR - http://www.scopus.com/inward/record.url?scp=0022234920&partnerID=8YFLogxK

U2 - 10.1109/IRPS.1985.362070

DO - 10.1109/IRPS.1985.362070

M3 - Conference article

AN - SCOPUS:0022234920

SP - 24

EP - 31

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

SN - 0099-9512

ER -