Quantitative discussion on electron-hole universal tunnel mass in ultrathin dielectric of oxide and oxide-nitride

Hiroshi Watanabe*

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

MOS and MIS capacitor has been extensively studied in past several decades by many authors. It has been expected to reveal how basic physics relate electron device operation. In this structure, several physical phenomena co-work and then exhibit the electrical properties measured in IV- and CV-characteristics. On the other hand, the conventional models were established separately for the inversion layer (positive gate voltage), the depletion region (negative-low gate voltage), and the accumulation region (negative-high gate voltage). In addition, actual MOS/MIS samples have interfacial transition layer where physical properties are gradually changed from Si to oxide or other dielectric, the varying composition ratio of molecules and local traps owing to atomistic dangling bonds through dielectric layer. What will happen if we self-consistently unify all the physical models that are separately developed?

原文English
主出版物標題Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
發行者Electrochemical Society Inc.
頁面303-320
頁數18
版本4
ISBN(電子)9781607682158
ISBN(列印)9781566778657
DOIs
出版狀態Published - 2011

出版系列

名字ECS Transactions
號碼4
35
ISSN(列印)1938-5862
ISSN(電子)1938-6737

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