Quad-SCR Device for Cross-Domain ESD Protection

Federico A. Altolaguirre, Ming-Dou Ker*

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A new electrostatic discharge (ESD) protection device, called quad-silicon controlled rectifier (QSCR), is proposed and verified in a 0.25- μm CMOS process. The QSCR is designed to be used as ESD protection between separated power domains. Since the QSCR embeds four SCRs between its four terminals, no extra ESD clamps are needed to protect the interface circuits between two separated power domains. Implementations with different circuit topologies were also analyzed to achieve a comprehensive ESD protection design for different applications. From the experimental results, the QSCR can withstand 8-kV HBM and 600-V MM ESD stresses with a silicon area of 75 μm ×100μm.

原文English
文章編號7498685
頁(從 - 到)3177-3184
頁數8
期刊IEEE Transactions on Electron Devices
63
發行號8
DOIs
出版狀態Published - 1 一月 2016

指紋

深入研究「Quad-SCR Device for Cross-Domain ESD Protection」主題。共同形成了獨特的指紋。

引用此