PVD HfO2 for high-precision MIM capacitor applications

Sun Jung Kim*, Byung Jin Cho, Mine Fu Li, Xiongfei Yu, Chunxiang Zhu, Albert Chin, Dim Lee Kwong

*此作品的通信作者

研究成果: Article同行評審

59 引文 斯高帕斯(Scopus)

摘要

Metal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO2 with Ta and TaN for top and bottom electrodes, respectively. High-capacitance densities from 4.7 to 8.1 fF/μm2 have been achieved while maintaining the leakage current densities around 1 × 10-8 A/cm2 within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density.

原文English
頁(從 - 到)387-389
頁數3
期刊IEEE Electron Device Letters
24
發行號6
DOIs
出版狀態Published - 1 六月 2003

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