摘要
In this paper, we investigated GaN-based light-emitting diodes (LEDs) with embedded air voids grown by pulsed growth epitaxial (PGE) method. The void shape can be successfully controlled using the patterned SiO2AlN/sapphire template and pulsed growth method. By embedding the air voids, we could enhance the 20-mA output power by >61.9%, compared with conventional LED. The improvements could be attributed to the enhanced light extraction efficiency utilizing air voids and improved internal quantum efficiency through PGE method.
原文 | English |
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文章編號 | 6894153 |
頁(從 - 到) | 854-859 |
頁數 | 6 |
期刊 | IEEE Journal of Quantum Electronics |
卷 | 50 |
發行號 | 10 |
DOIs | |
出版狀態 | Published - 1 10月 2014 |