Pulsed growth epitaxial method of GaN-Based light-emitting diodes on patterned SiO2AlN/sapphire template

Yu An Chen*, Cheng-Huang Kuo, Li Chuan Chang, Ji Pu Wu

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this paper, we investigated GaN-based light-emitting diodes (LEDs) with embedded air voids grown by pulsed growth epitaxial (PGE) method. The void shape can be successfully controlled using the patterned SiO2AlN/sapphire template and pulsed growth method. By embedding the air voids, we could enhance the 20-mA output power by >61.9%, compared with conventional LED. The improvements could be attributed to the enhanced light extraction efficiency utilizing air voids and improved internal quantum efficiency through PGE method.

原文English
文章編號6894153
頁(從 - 到)854-859
頁數6
期刊IEEE Journal of Quantum Electronics
50
發行號10
DOIs
出版狀態Published - 1 10月 2014

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