Pulsed growth epitaxial method of GaN-Based light-emitting diodes on patterned SiO2AlN/sapphire template

Yu An Chen; Cheng-Huang Kuo; Li Chuan Chang; Ji Pu Wu

doi:10.1109/JQE.2014.2353932

Pulsed growth epitaxial method of GaN-Based light-emitting diodes on patterned SiO2AlN/sapphire template

Yu An Chen^*, Cheng-Huang Kuo, Li Chuan Chang, Ji Pu Wu

^*此作品的通信作者

照明與能源光電研究所

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

In this paper, we investigated GaN-based light-emitting diodes (LEDs) with embedded air voids grown by pulsed growth epitaxial (PGE) method. The void shape can be successfully controlled using the patterned SiO₂AlN/sapphire template and pulsed growth method. By embedding the air voids, we could enhance the 20-mA output power by >61.9%, compared with conventional LED. The improvements could be attributed to the enhanced light extraction efficiency utilizing air voids and improved internal quantum efficiency through PGE method.

原文	English
文章編號	6894153
頁（從 - 到）	854-859
頁數	6
期刊	IEEE Journal of Quantum Electronics
卷	50
發行號	10
DOIs	https://doi.org/10.1109/JQE.2014.2353932
出版狀態	Published - 1 10月 2014

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10.1109/JQE.2014.2353932

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abstract = "In this paper, we investigated GaN-based light-emitting diodes (LEDs) with embedded air voids grown by pulsed growth epitaxial (PGE) method. The void shape can be successfully controlled using the patterned SiO2AlN/sapphire template and pulsed growth method. By embedding the air voids, we could enhance the 20-mA output power by >61.9%, compared with conventional LED. The improvements could be attributed to the enhanced light extraction efficiency utilizing air voids and improved internal quantum efficiency through PGE method.",

keywords = "AlN, LED., Pulsed growth, voids",

author = "Chen, {Yu An} and Cheng-Huang Kuo and Chang, {Li Chuan} and Wu, {Ji Pu}",

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AU - Chen, Yu An

AU - Kuo, Cheng-Huang

AU - Chang, Li Chuan

AU - Wu, Ji Pu

PY - 2014/10/1

Y1 - 2014/10/1

N2 - In this paper, we investigated GaN-based light-emitting diodes (LEDs) with embedded air voids grown by pulsed growth epitaxial (PGE) method. The void shape can be successfully controlled using the patterned SiO2AlN/sapphire template and pulsed growth method. By embedding the air voids, we could enhance the 20-mA output power by >61.9%, compared with conventional LED. The improvements could be attributed to the enhanced light extraction efficiency utilizing air voids and improved internal quantum efficiency through PGE method.

AB - In this paper, we investigated GaN-based light-emitting diodes (LEDs) with embedded air voids grown by pulsed growth epitaxial (PGE) method. The void shape can be successfully controlled using the patterned SiO2AlN/sapphire template and pulsed growth method. By embedding the air voids, we could enhance the 20-mA output power by >61.9%, compared with conventional LED. The improvements could be attributed to the enhanced light extraction efficiency utilizing air voids and improved internal quantum efficiency through PGE method.

KW - AlN

KW - LED.

KW - Pulsed growth

KW - voids

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JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 10

M1 - 6894153

ER -

Pulsed growth epitaxial method of GaN-Based light-emitting diodes on patterned SiO2AlN/sapphire template

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