Prospect of cobalt-mix-tetraethoxysilane method on localized lateral growth of carbon nanotubes for both p- and n-type field effect transistors

Engineering & Materials Science

• Cobalt 100%
• Field effect transistors 92%
• Carbon nanotubes 91%
• Polymers 63%
• Chemical vapor deposition 33%
• Nanoelectronics 26%
• Single-walled carbon nanotubes (SWCN) 26%
• Catalysts 24%
• Plasma enhanced chemical vapor deposition 13%
• Nanotubes 12%
• Silicon nitride 11%
• Air 10%
• Ethanol 9%
• Annealing 9%
• Integrated circuits 8%
• Plasmas 8%
• Hydrogen 7%
• Temperature 3%

Physics & Astronomy

• cobalt 80%
• carbon nanotubes 74%
• field effect transistors 67%
• catalysts 21%
• vapor deposition 18%
• manipulators 13%
• dispersing 9%
• air 9%
• embedding 8%
• ethyl alcohol 7%
• silicon nitrides 7%
• nanotubes 7%
• integrated circuits 7%
• flexibility 7%
• manufacturing 6%
• hydrogen 4%
• annealing 4%
• temperature 2%