1.5 μm thick polycrystalline diamond film was deposited using microwave plasma chemical vapor deposition (MPCVD) as x-ray mask membrane with 0.1 to approximately 0.25 μm seeding. The temperature is controlled between 820 to 830 degree Celsius and the ratios of CH4/H2 gas mixtures are varied for the quality and stress of the diamond film. The optical properties and radiation damage of the membrane will be demonstrated. Low tensile stress diamond membrane has been formed with backside KOH etching. Surface morphology was monitored by the AFM and the quality of the diamond film was measured by the Raman spectroscopy.
|頁（從 - 到）||173-175|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||Published - 1 12月 1998|
|事件||Proceedings of the 1998 Conference on Materials and Device Characterization in Micromachining - Santa Clara, CA, USA|
持續時間: 21 9月 1998 → 22 9月 1998