Promising Engineering Approaches for Improving the Reliability of HfZrO_x2-D and 3-D Ferroelectric Random Access Memories

Keyphrases

• Engineering Approach 100%
• Sidewall 100%
• Interfacial Layer 100%
• Ferroelectric Memory 100%
• Random Access Memory 100%
• External Stress 100%
• Effective Method 50%
• Orthorhombic Phase 50%
• Tetragonal 50%
• High Polarization 50%
• Wake-up 50%
• Ferroelectric Phase 50%
• Retention Test 50%
• Ferroelectric Capacitor 50%
• Retention Loss 50%
• Vertical Sidewall 50%
• Sources of Stress 50%
• Interface Orientation 50%
• Stress Engineering 50%
• Memory Scaling 50%
• Reading Mode 50%
• Imprinting Effect 50%
• Polarization Fraction 50%

Engineering

• Engineering 100%
• Random Access Memory 100%
• Side Wall 75%
• Interfacial Layer 50%
• External Stress 25%
• Effective Stress Method 25%

Material Science

• Ferroelectric Material 100%
• Density 25%
• Capacitor 25%
• Ferroelectricity 25%