Progress and prospects of GaN-based VCSEL from near UV to green emission

Hsin-Chieh Yu, Zhi wei Zheng, Yang Mei, Rong bin Xu, Jian ping Liu, Hui Yang, Bao ping Zhang*, Tien-Chang Lu, Hao-Chung Kuo

*此作品的通信作者

研究成果: Review article同行評審

39 引文 斯高帕斯(Scopus)

摘要

GaN is a great material for making optoelectronic devices in the blue, blue-violet and green bands. Vertical-cavity surface-emitting lasers (VCSELs) have many advantages including small footprint, circular symmetry of output beam, two-dimensional scalability and/or addressability, surface-mount packaging, good price-performance ratio, and simple optics/alignment for output coupling. In this paper, we would like to (1) Review the design and fabrication of GaN-based VCSELs including some technology challenges, (2) Discuss the design and metalorganic chemical vapor deposition (MOCVD) growth of electrically pumped blue VCSELs and (3) Demonstrate world first green VCSEL using quantum dots (QDs) active region to overcome the ‘green gap’.

原文English
頁(從 - 到)1-19
頁數19
期刊Progress in Quantum Electronics
57
DOIs
出版狀態Published - 2018

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