Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices

Yi-ming Li; Han Tung Chang; Chun Ning Lai; Pei Jung Chao; Chieh Yang Chen

doi:10.1109/IEDM.2015.7409827

Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices

Yi-ming Li, Han Tung Chang, Chun Ning Lai, Pei Jung Chao, Chieh Yang Chen

電信工程研究所

研究成果: Conference contribution › 同行評審

46 引文斯高帕斯（Scopus）

摘要

In this work, process variation effect (PVE), work function fluctuation (WKF), and random dopant fluctuation (RDF) on 10-nm high-K/metal gate gate-all-around silicon nanowire MOSFET devices using full-quantum-mechanically validated and experimentally calibrated device simulation are studied. The small aspect ratio device has greater immunity of RDF, while suffers from PVE and WKF.

原文	English
主出版物標題	2015 IEEE International Electron Devices Meeting, IEDM 2015
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	34.4.1-34.4.4
ISBN（電子）	9781467398930
DOIs	https://doi.org/10.1109/IEDM.2015.7409827
出版狀態	Published - 16 2月 2015
事件	61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States 持續時間: 7 12月 2015 → 9 12月 2015

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
卷	2016-February
ISSN（列印）	0163-1918

Conference

Conference	61st IEEE International Electron Devices Meeting, IEDM 2015
國家/地區	United States
城市	Washington
期間	7/12/15 → 9/12/15

存取文件

10.1109/IEDM.2015.7409827

其它文件與鏈接

Link to publication in Scopus

引用此

Li, Y., Chang, H. T., Lai, C. N., Chao, P. J., & Chen, C. Y. (2015). Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices. 於 2015 IEEE International Electron Devices Meeting, IEDM 2015 (頁 34.4.1-34.4.4). 文章 7409827 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2016-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2015.7409827

Li, Yi-ming ; Chang, Han Tung ; Lai, Chun Ning 等. / Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices. 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 頁 34.4.1-34.4.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{b7df649c93754d6e8a1b360b622ba440,

title = "Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices",

abstract = "In this work, process variation effect (PVE), work function fluctuation (WKF), and random dopant fluctuation (RDF) on 10-nm high-K/metal gate gate-all-around silicon nanowire MOSFET devices using full-quantum-mechanically validated and experimentally calibrated device simulation are studied. The small aspect ratio device has greater immunity of RDF, while suffers from PVE and WKF.",

author = "Yi-ming Li and Chang, {Han Tung} and Lai, {Chun Ning} and Chao, {Pei Jung} and Chen, {Chieh Yang}",

year = "2015",

month = feb,

day = "16",

doi = "10.1109/IEDM.2015.7409827",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "34.4.1--34.4.4",

booktitle = "2015 IEEE International Electron Devices Meeting, IEDM 2015",

address = "United States",

note = "61st IEEE International Electron Devices Meeting, IEDM 2015 ; Conference date: 07-12-2015 Through 09-12-2015",

}

Li, Y, Chang, HT, Lai, CN, Chao, PJ & Chen, CY 2015, Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices. 於 2015 IEEE International Electron Devices Meeting, IEDM 2015., 7409827, Technical Digest - International Electron Devices Meeting, IEDM, 卷 2016-February, Institute of Electrical and Electronics Engineers Inc., 頁 34.4.1-34.4.4, 61st IEEE International Electron Devices Meeting, IEDM 2015, Washington, United States, 7/12/15. https://doi.org/10.1109/IEDM.2015.7409827

Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices. / Li, Yi-ming; Chang, Han Tung; Lai, Chun Ning 等.
2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 34.4.1-34.4.4 7409827 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2016-February).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices

AU - Li, Yi-ming

AU - Chang, Han Tung

AU - Lai, Chun Ning

AU - Chao, Pei Jung

AU - Chen, Chieh Yang

PY - 2015/2/16

Y1 - 2015/2/16

N2 - In this work, process variation effect (PVE), work function fluctuation (WKF), and random dopant fluctuation (RDF) on 10-nm high-K/metal gate gate-all-around silicon nanowire MOSFET devices using full-quantum-mechanically validated and experimentally calibrated device simulation are studied. The small aspect ratio device has greater immunity of RDF, while suffers from PVE and WKF.

AB - In this work, process variation effect (PVE), work function fluctuation (WKF), and random dopant fluctuation (RDF) on 10-nm high-K/metal gate gate-all-around silicon nanowire MOSFET devices using full-quantum-mechanically validated and experimentally calibrated device simulation are studied. The small aspect ratio device has greater immunity of RDF, while suffers from PVE and WKF.

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U2 - 10.1109/IEDM.2015.7409827

DO - 10.1109/IEDM.2015.7409827

M3 - Conference contribution

AN - SCOPUS:84964038697

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 34.4.1-34.4.4

BT - 2015 IEEE International Electron Devices Meeting, IEDM 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 61st IEEE International Electron Devices Meeting, IEDM 2015

Y2 - 7 December 2015 through 9 December 2015

ER -

Li Y, Chang HT, Lai CN, Chao PJ, Chen CY. Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices. 於 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 34.4.1-34.4.4. 7409827. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2015.7409827

Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices

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Conference

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