Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale planar MOSFET and bulk FinFET devices

Yi-Ming Li*, Chih Hong Hwang, Hui Wen Cheng

*此作品的通信作者

研究成果: Article同行評審

23 引文 斯高帕斯(Scopus)

指紋

深入研究「Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale planar MOSFET and bulk FinFET devices」主題。共同形成了獨特的指紋。

Keyphrases

Engineering

Material Science