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Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale planar MOSFET and bulk FinFET devices
Yi-Ming Li
*
, Chih Hong Hwang, Hui Wen Cheng
*
此作品的通信作者
電機工程學系
研究成果
:
Article
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同行評審
23
引文 斯高帕斯(Scopus)
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深入研究「Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale planar MOSFET and bulk FinFET devices」主題。共同形成了獨特的指紋。
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Keyphrases
Threshold Voltage Shift
100%
Process Variation
100%
MOSFET
100%
Transistor Device
100%
Random Dopants
100%
Filed-effect Transistor
100%
Equivalent Oxide Thickness
75%
Vth Fluctuation
75%
Threshold Voltage
50%
Gate Oxide Thickness
50%
Thickness Scaling
50%
Silica
25%
High-k Dielectric
25%
HfO2
25%
Aluminum Oxide
25%
Device Characteristics
25%
Device Scaling
25%
Semiconductor Devices
25%
Nanoelectronic Applications
25%
Simulation Validation
25%
Intrinsic Fluctuations
25%
Nanoscale Semiconductor Devices
25%
Next-generation Semiconductor
25%
Structural Limitation
25%
Engineering
Dopants
100%
Oxide Thickness
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Nanoscale
100%
Voltage Fluctuation
100%
Effect Transistor
100%
Process Variation
100%
Gate Oxide
40%
Semiconductor Device
40%
Dielectrics
20%
Limitations
20%
Device Scaling
20%
Nanoelectronics
20%
Promising Candidate
20%
Silicon Dioxide
20%
Material Science
Doping (Additives)
100%
Transistor
100%
Oxide Compound
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Semiconductor Device
40%
Al2O3
20%
Dielectric Material
20%