@inproceedings{f057423b4af245f8ae7a135efecfa60f,
title = "Process-related reliability issues toward sub-100 nm device regime",
abstract = "Crucial process-related reliability issues, such as boron penetration, plasma charging damage, metal-gate processing, and emerging high-k dielectric, toward sub-100 nm technology nodes have been discussed.",
author = "Chang, {C. Y.} and Tien-Sheng Chao and Horng-Chih Lin and Chao-Hsin Chien",
year = "2002",
doi = "10.1109/MIEL.2002.1003159",
language = "American English",
isbn = "0780372352",
series = "2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings",
publisher = "IEEE Computer Society",
pages = "133--140",
booktitle = "2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings",
address = "United States",
note = "2002 23rd International Conference on Microelectronics, MIEL 2002 ; Conference date: 12-05-2002 Through 15-05-2002",
}