Process optimization for preventing boron-penetration using P or as co-implant in p-poly gate of P-MOSFETs

W. T. Sun*, S. H. Chen, C. J. Lin, Tien-Sheng Chao, C. C.H. Hsu

*此作品的通信作者

研究成果: Paper同行評審

1 引文 斯高帕斯(Scopus)

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Physics & Astronomy

Engineering & Materials Science

Chemical Compounds