Process optimization for preventing boron-penetration using P or as co-implant in p-poly gate of P-MOSFETs

W. T. Sun*, S. H. Chen, C. J. Lin, Tien-Sheng Chao, C. C.H. Hsu

*此作品的通信作者

研究成果: Paper同行評審

1 引文 斯高帕斯(Scopus)

摘要

A comprehensive study of the phosphorus dosage and annealing condition dependencies of boron-penetration and poly-depletion is presented. The experimental results show that the boron-penetration in BF2 implanted poly-gate is significantly reduced as the dose of co-implanted phosphorus increases. The phosphorus dose of about 1.5×1015cm-2 in p+-poly gate can effectively retard the penetration of boron in BF2 3 to 5×1015cm-2 doped poly gate under 900°C, 60min annealing (30min reflow anneal, and 30min post-contact implant anneal). The performance of boron-penetration-free phosphorus co-implanted p+-poly gate MOSFETs is also shown to be much better than the device with boron-penetration. In arsenic Co-implanted p-poly gate, it also appears that arsenic co-implant would also retard boron penetrating through thin gate oxide. An optimal and effective gate processing for preventing boron-penetration is proposed for dual-gate CMOS devices.

原文English
頁面40-43
頁數4
DOIs
出版狀態Published - 1995
事件Proceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan
持續時間: 31 5月 19952 6月 1995

Conference

ConferenceProceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications
城市Taipei, Taiwan
期間31/05/952/06/95

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