Process integration of composite high-k tunneling dielectric for nanocrystal based carbon nanotube memory

Udayan Ganguly*, Tuo-Hung Hou, Edwin Chihchuan Kan

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Recently, metal nanocrystal (NC) based carbon nanotube (CNT) memory has been demonstrated with sub-5V low bias programming, single electron sensitivity, but poor room-temperature retention. The process integration of an ultra-thin tunnel dielectric is essential for lateral, vertical scaling and reliable room-temperature operations. Low defect density and conformal deposition on the nanotube are required to enhance the performance as a tunnel barrier. Additionally, Au contamination in the CNT decreases the on/off current ratio in the CNTFETs by substantially increasing the off current. Consequently, the dielectric should function as a good diffusion barrier for Au in the nanocrystals. We have explored composite tunneling dielectric film with SiO 2 seed layer for conformal high-k deposition to demonstrate minimal Au contamination and improved retention. Room temperature retention of better than three days has been observed.

原文English
主出版物標題Nanostructured and Patterned Materials for Information Storage
發行者Materials Research Society
頁面183-188
頁數6
ISBN(列印)9781604234138
DOIs
出版狀態Published - 2006
事件2006 MRS Fall Meeting - Boston, MA, United States
持續時間: 27 11月 20061 12月 2006

出版系列

名字Materials Research Society Symposium Proceedings
961
ISSN(列印)0272-9172

Conference

Conference2006 MRS Fall Meeting
國家/地區United States
城市Boston, MA
期間27/11/061/12/06

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