Process Integration and Interconnection Design of Passive-Matrix LED Micro-Displays with 256 Pixel-Per-Inch Resolution

Shuo Huang Yuan; Shih Siang Yan; Yu Shiuan Yao; Chung Cheng Wu; Ray Hua Horng; Dong Sing Wuu

doi:10.1109/JEDS.2020.2967476

Process Integration and Interconnection Design of Passive-Matrix LED Micro-Displays with 256 Pixel-Per-Inch Resolution

Shuo Huang Yuan, Shih Siang Yan, Yu Shiuan Yao, Chung Cheng Wu, Ray Hua Horng, Dong Sing Wuu

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

摘要

A 0.28-inch InGaN-based blue micro-LED display with 256 pixel-per-inch resolution and a pitch of 100~{{\mu }}\text{m} was successfully fabricated in this study. A thick Ti/Al/Ti/Au interconnection metal was deposited on the n-type gallium nitride (n-GaN) region to reduce the interconnection resistance. The micro-LED array with interconnection metal exhibits better electrical property consistency as compared with that of the traditional one. The output power, forward voltage, and external quantum efficiency of micro-LED, which measured under 1-mA current injection with the full lighting mode, are 0.8 mW, 3.0 V, and 10%, respectively. This technique has the potential to integrate InGaN-based LEDs with quantum dots for full-color applications.

原文	English
文章編號	8962357
頁（從 - 到）	251-255
頁數	5
期刊	IEEE Journal of the Electron Devices Society
卷	8
DOIs	https://doi.org/10.1109/JEDS.2020.2967476
出版狀態	Published - 17 1月 2020

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title = "Process Integration and Interconnection Design of Passive-Matrix LED Micro-Displays with 256 Pixel-Per-Inch Resolution",

abstract = "A 0.28-inch InGaN-based blue micro-LED display with 256 pixel-per-inch resolution and a pitch of 100~{{\mu }}\text{m} was successfully fabricated in this study. A thick Ti/Al/Ti/Au interconnection metal was deposited on the n-type gallium nitride (n-GaN) region to reduce the interconnection resistance. The micro-LED array with interconnection metal exhibits better electrical property consistency as compared with that of the traditional one. The output power, forward voltage, and external quantum efficiency of micro-LED, which measured under 1-mA current injection with the full lighting mode, are 0.8 mW, 3.0 V, and 10%, respectively. This technique has the potential to integrate InGaN-based LEDs with quantum dots for full-color applications.",

keywords = "InGaN, Micro-LED, display, external quantum efficiency, interconnection",

author = "Yuan, {Shuo Huang} and Yan, {Shih Siang} and Yao, {Yu Shiuan} and Wu, {Chung Cheng} and Horng, {Ray Hua} and Wuu, {Dong Sing}",

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doi = "10.1109/JEDS.2020.2967476",

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AU - Yuan, Shuo Huang

AU - Yan, Shih Siang

AU - Yao, Yu Shiuan

AU - Wu, Chung Cheng

AU - Horng, Ray Hua

AU - Wuu, Dong Sing

PY - 2020/1/17

Y1 - 2020/1/17

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KW - Micro-LED

KW - display

KW - external quantum efficiency

KW - interconnection

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Process Integration and Interconnection Design of Passive-Matrix LED Micro-Displays with 256 Pixel-Per-Inch Resolution

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