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Process development and impurities analysis for the bottom antireflective coating material
Fu-Hsiang Ko
*
, H. L. Chen, T. Y. Huang, H. C. Cheng, C. J. Ko, T. C. Chu
*
此作品的通信作者
材料科學與工程學系
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Keyphrases
Bottom Anti-reflective Coating
100%
Coating Materials
100%
Developmental Analysis
100%
Process Development
100%
Impurity Analysis
100%
Process-related Impurities
100%
Layer Thickness
42%
Microwave Digestion
28%
Photoresist Layer
28%
Digestion Method
28%
Inductively Coupled Plasma Mass Spectrometry
14%
Wafer Surface
14%
Spin Coating
14%
Limit of Detection
14%
Analytical Results
14%
Digestion Efficiency
14%
Semiconductors
14%
High-throughput
14%
Ppb-level
14%
Digestion
14%
Simulation Method
14%
Metallic Impurities
14%
Coating Thickness
14%
Coating Layer
14%
Gravimetric Method
14%
Measurement Method
14%
Coating Rate
14%
Light Reflection
14%
Optical Behavior
14%
Cu-Zn
14%
Spike Recovery
14%
Refection
14%
Engineering
Coating Material
100%
Process Development
100%
Layer Thickness
75%
Photoresist
50%
One Step
50%
Good Agreement
25%
Analytical Result
25%
Inductively Coupled Plasma
25%
Detection Limit
25%
Simulation Method
25%
Layer Coating
25%
Stronger Effect
25%
Gravimetric Method
25%
Material Science
Spin Coating
100%
Inductively Coupled Plasma Mass Spectrometry
100%
Surface (Surface Science)
100%
Chemistry
Coating Agent
100%
Microwave Digestion
50%
Spin Coating
25%
Inductively Coupled Plasm Mass Spectrometry (ICPMS)
25%
Gravimetric Analysis
25%
Digestion Method
25%