Process and device reliability characterization techniques for advanced CMOS technology: The issues and methodologies

Steve S. Chung*

*此作品的通信作者

    研究成果同行評審

    1 引文 斯高帕斯(Scopus)

    摘要

    This paper will give an overview of more advanced charge pumping and Gated-Diode techniques for the process and reliability characterization of advanced CMOS devices. Its potential use for the device hot carrier reliability study and process characterization, e.g., oxide quality monitor, plasma-induced oxide damage, and STI effects will be presented. More recent developments for 1nm range ultra-thin gate oxide CMOS device applications will also be demonstrated. Further development and the roadblocks of these techniques will be addressed.

    原文English
    頁面93-97
    頁數5
    DOIs
    出版狀態Published - 3月 2004
    事件Proceedings of the 2004 International Conference on Microelectronic Test Structures (ICMTS 2004) - Awaji, 日本
    持續時間: 22 3月 200425 3月 2004

    Conference

    ConferenceProceedings of the 2004 International Conference on Microelectronic Test Structures (ICMTS 2004)
    國家/地區日本
    城市Awaji
    期間22/03/0425/03/04

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