摘要
This paper will give an overview of more advanced charge pumping and Gated-Diode techniques for the process and reliability characterization of advanced CMOS devices. Its potential use for the device hot carrier reliability study and process characterization, e.g., oxide quality monitor, plasma-induced oxide damage, and STI effects will be presented. More recent developments for 1nm range ultra-thin gate oxide CMOS device applications will also be demonstrated. Further development and the roadblocks of these techniques will be addressed.
原文 | English |
---|---|
頁面 | 93-97 |
頁數 | 5 |
DOIs | |
出版狀態 | Published - 3月 2004 |
事件 | Proceedings of the 2004 International Conference on Microelectronic Test Structures (ICMTS 2004) - Awaji, 日本 持續時間: 22 3月 2004 → 25 3月 2004 |
Conference
Conference | Proceedings of the 2004 International Conference on Microelectronic Test Structures (ICMTS 2004) |
---|---|
國家/地區 | 日本 |
城市 | Awaji |
期間 | 22/03/04 → 25/03/04 |