Process and device characterization of a Gated-Field-Emission triodes for flat-panel display application

S. C. Lu, J. C.M. Huang, J. H. Tsai, D. Liu, C. Y. Lin, D. Wang, J. G. Peng, T. Z. Yang, C. S. Chiou, K. L. Chang, C. L. Lee, C. W. Lu

研究成果: Paper同行評審

摘要

Gated-Field-Emission Triode from the cone-tip formation process to its emission properties has been systematically characterized. Process simulation shows that the successful formation of the micro tip structure is mainly determined by the migration length of the e-beam evaporated layer. The measured triode characteristics matches well with the simulated program in the saturation region with proper tip radius adjustment without an artificial enhancement factor. The calculated enhancement factor matches well with other published data.

原文English
DOIs
出版狀態Published - 1994
事件1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
持續時間: 12 7月 199415 7月 1994

Conference

Conference1994 International Electron Devices and Materials Symposium, EDMS 1994
國家/地區Taiwan
城市Hsinchu
期間12/07/9415/07/94

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