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Probing Thermally Activated Atomic and Nanocrystalline Defect Motion Through Noise Processes in RuO2 Nanowires
Sheng-Shiuan Yeh
, Cheng Ya Yu, Yi Te Lee, Shao Pin Chiu,
Juhn-Jong Lin
*
*
此作品的通信作者
國際半導體產業學院
新世代功能性物質研究中心
物理研究所
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Keyphrases
Atomic Defects
66%
Bonding Strength
33%
Breakdown Current Density
33%
Defect Kinetics
33%
Defect Motion
100%
Dynamic Defects
33%
Electrical Noise
33%
Energy Distribution Function
33%
Geometric Size
33%
Grain Boundary
33%
Low-frequency Noise
33%
Mechanical Hardness
33%
Miniaturized Device
33%
Moore's Law
33%
Nanocrystalline
100%
Nanocrystallites
33%
Nanodevices
33%
Nanomaterials
33%
Nanostructures
33%
Nanowires
100%
Noise Instability
33%
Noise Processes
100%
Non-invasive Characterization
33%
Number Density
33%
Oxygen Vacancy
33%
Relaxation Time
33%
Resistance Noise
33%
Room Temperature
33%
RuO2
100%
Rutile
33%
Structural Instability
33%
Thermally Activated Processes
100%
Ultimate Performance
33%
Engineering
Bonding Strength
50%
Electrical Noise
50%
Energy Distribution
50%
Frequency Noise
50%
Moore's Law
50%
Nanocrystalline
100%
Nanomaterial
100%
Nanowire
100%
Noise Process
100%
Number Density
50%
Oxygen Vacancy
50%
Relaxation Time
50%
Room Temperature
50%
Material Science
Atomic Defect
100%
Density
100%
Grain Boundary
50%
Nanocrystalline
100%
Nanocrystallites
50%
Nanodevice
50%
Nanostructure
50%
Nanostructured Material
50%
Nanowire
100%
Oxygen Vacancy
50%
Physics
Atomic Defect
100%
Distribution Function
50%
Energy Distribution
50%
Grain Boundary
50%
Nanocrystalline
100%
Nanomaterial
100%
Nanowire
100%
Oxygen Vacancy
50%
Relaxation Time
50%
Room Temperature
50%