Probing the Evolution of Electrically Active Defects in Doped Ferroelectric HfO2 during Wake-Up and Fatigue

U.  Celano; Y. H. Chen; A. Minj; K.  Banerjee; N. Ronchi; S.  McMitchell; P. Van  Marcke; P.  Favia; Tian-Li Wu; B.  Kaczer; G. Van den  Bosch; J. Van  Houdt; P. van der  Heide

doi:10.1109/VLSITechnology18217.2020.9265098

Probing the Evolution of Electrically Active Defects in Doped Ferroelectric HfO2 during Wake-Up and Fatigue

U. Celano^*, Y. H. Chen, A. Minj, K. Banerjee, N. Ronchi, S. McMitchell, P. Van Marcke, P. Favia, Tian-Li Wu, B. Kaczer, G. Van den Bosch, J. Van Houdt, P. van der Heide

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摘要

We correlate the concentration and configuration of electrical defects in ferroelectric Si-doped HfO2 (FE-HfO2) with the electrical device performance during wake-up and fatigue regimes. To this end, we combine time-to-breakdown (TDDB), Kelvin probe force microscopy (KPFM), conductive atomic force microcopy (C-AFM) and Scalpel SPM, probing for the first time, the nanoscopic material variations as a function of device's field cycling behavior.

原文	English
DOIs	https://doi.org/10.1109/VLSITechnology18217.2020.9265098
出版狀態	Published - 6月 2020

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10.1109/VLSITechnology18217.2020.9265098

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abstract = "We correlate the concentration and configuration of electrical defects in ferroelectric Si-doped HfO2 (FE-HfO2) with the electrical device performance during wake-up and fatigue regimes. To this end, we combine time-to-breakdown (TDDB), Kelvin probe force microscopy (KPFM), conductive atomic force microcopy (C-AFM) and Scalpel SPM, probing for the first time, the nanoscopic material variations as a function of device's field cycling behavior.",

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T1 - Probing the Evolution of Electrically Active Defects in Doped Ferroelectric HfO2 during Wake-Up and Fatigue

AU - Celano, U.

AU - Chen, Y. H.

AU - Minj, A.

AU - Banerjee, K.

AU - Ronchi, N.

AU - McMitchell, S.

AU - Marcke, P. Van

AU - Favia, P.

AU - Wu, Tian-Li

AU - Kaczer, B.

AU - Bosch, G. Van den

AU - Houdt, J. Van

AU - Heide, P. van der

PY - 2020/6

Y1 - 2020/6

N2 - We correlate the concentration and configuration of electrical defects in ferroelectric Si-doped HfO2 (FE-HfO2) with the electrical device performance during wake-up and fatigue regimes. To this end, we combine time-to-breakdown (TDDB), Kelvin probe force microscopy (KPFM), conductive atomic force microcopy (C-AFM) and Scalpel SPM, probing for the first time, the nanoscopic material variations as a function of device's field cycling behavior.

AB - We correlate the concentration and configuration of electrical defects in ferroelectric Si-doped HfO2 (FE-HfO2) with the electrical device performance during wake-up and fatigue regimes. To this end, we combine time-to-breakdown (TDDB), Kelvin probe force microscopy (KPFM), conductive atomic force microcopy (C-AFM) and Scalpel SPM, probing for the first time, the nanoscopic material variations as a function of device's field cycling behavior.

U2 - 10.1109/VLSITechnology18217.2020.9265098

DO - 10.1109/VLSITechnology18217.2020.9265098

M3 - Paper

ER -

Probing the Evolution of Electrically Active Defects in Doped Ferroelectric HfO2 during Wake-Up and Fatigue

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