Preventing dielectric damage of low-k organic siloxane by passivation treatment

T. C. Chang*, Y. S. Mor, Po-Tsun Liu, T. M. Tsai, C. W. Chen, Y. J. Mei, Fu-Ming Pan, W. F. Wu, S. M. Sze


研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)


An organic SOG, the Hybird-Organic-Siloxane-Polymer (HOSP), has high applicability to ULSI processes, because of the low dielectric constant of about 2.5. However, the HOSP film will be damaged after photoresist removal. The function groups of HOSP will be destroyed by O2 plasma ashing and chemical wet stripper, which leads to electrical degradation. In order to avoid the issue, H2 plasma treatment is proposed to prevent HOSP film from photoresisit stripping damage. It is found that leakage current is decreased significantly and the dielectric constant is still maintained at a low k value even after photoresist stripping. Therefore, H2 plasma treatment is an effective technique to enhance the resistance of HOSP film against photoresist stripping damage.

頁(從 - 到)469-475
期刊Microelectronic Engineering
出版狀態Published - 4月 2002


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