Preventing dielectric damage of low-k organic siloxane by passivation treatment

T. C. Chang*, Y. S. Mor, Po-Tsun Liu, T. M. Tsai, C. W. Chen, Y. J. Mei, Fu-Ming Pan, W. F. Wu, S. M. Sze

*此作品的通信作者

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

An organic SOG, the Hybird-Organic-Siloxane-Polymer (HOSP), has high applicability to ULSI processes, because of the low dielectric constant of about 2.5. However, the HOSP film will be damaged after photoresist removal. The function groups of HOSP will be destroyed by O2 plasma ashing and chemical wet stripper, which leads to electrical degradation. In order to avoid the issue, H2 plasma treatment is proposed to prevent HOSP film from photoresisit stripping damage. It is found that leakage current is decreased significantly and the dielectric constant is still maintained at a low k value even after photoresist stripping. Therefore, H2 plasma treatment is an effective technique to enhance the resistance of HOSP film against photoresist stripping damage.

原文English
頁(從 - 到)469-475
頁數7
期刊Microelectronic Engineering
60
發行號3-4
DOIs
出版狀態Published - 4月 2002

指紋

深入研究「Preventing dielectric damage of low-k organic siloxane by passivation treatment」主題。共同形成了獨特的指紋。

引用此