Pressure-induced metallization and resonant Raman scattering in Zn1-x MnxTe

Y. C. Lin, W. C. Fan, C. H. Chiu, F. K. Ke, S. L. Yang, D. S. Chuu, M. C. Lee, Wei-Kuo Chen, Wen-Hao Chang, Wu-Ching Chou, J. S. Hsu, J. L. Shen

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5 引文 斯高帕斯(Scopus)


Pressure-induced resonant Raman scattering is adopted to analyze the zone-center optical phonon modes and crystal characteristics of Zn1-x Mnx Te (0 ≦x≦0.26) thin films. The pressure (Pt) at which the semiconducting undergoes a transition to the metallic phase declines as a function of Mn concentration (x) according to the formula Pt (x) =15.7-25.4x+19.0 x2 (GPa). Pressure-dependent longitudinal and transverse optical phonon frequencies and the calculated mode Grüneisen parameters were adopted to investigate the influence of Mn2+ ions on the iconicity. The experimental results indicate that the manganese ions tend to increase the iconicity of ZnTe under ambient conditions, whereas an external hydrostatic pressure tends to reduce the iconicity and the bond length of Zn1-x Mnx Te.

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期刊Journal of Applied Physics
出版狀態Published - 1 7月 2008


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