Present status and future direction of BSIM SOI model for high-performance/low-power/RF application

Samuel K.H. Fung*, Pin Su, Chen-Ming Hu

*此作品的通信作者

研究成果: Conference contribution同行評審

7 引文 斯高帕斯(Scopus)

摘要

The recent progress of BSIM (Berkeley Short-channel IGFET Model) SPICE models extended for SOI transistors are reviewed. The models cover partially depleted (PD), fully depleted (FD) and dynamic depletion (FD) (automatically transition between PD and FD). The key concept of dynamic depletion will be discussed.

原文English
主出版物標題2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
編輯M. Laudon, B. Romanowicz
頁面690-693
頁數4
出版狀態Published - 2002
事件2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 - San Juan, 波多黎各
持續時間: 21 4月 200225 4月 2002

出版系列

名字2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

Conference

Conference2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
國家/地區波多黎各
城市San Juan
期間21/04/0225/04/02

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