Preparation and properties of perovskite thin films for resistive nonvolatile memory applications

Chun Hung Lai, Tseung-Yuen Tseng*

*此作品的通信作者

    研究成果: Conference article同行評審

    7 引文 斯高帕斯(Scopus)

    摘要

    Various perovskite structure electroceramic thin films have been studied for semiconductor memory applications. The high permittivity and ferroelectric remanent polarization properties of these materials give the promise of a new generation of advanced dynamic and/or nonvolatile memory devices. The recent study indicates that perovskite oxide showing bistable resistance switching behavior is a highly promising candidate for nonvolatile semiconductor device, the so-called resistance random access memory (RRAM). RRAMs exhibit sufficiently fast switching capability and low operation voltages as compared with flash memory, and bring about the current upsurge in research. This paper summarizes the fabrication and characterization of these potential materials, and provides a broad view of the current status and future trends for perovskite oxides-based RRAMs. The associated conduction mechanisms are also discussed with specific examples from recent literature.

    原文English
    頁(從 - 到)17-27
    頁數11
    期刊Ferroelectrics
    357
    發行號1 PART 3
    DOIs
    出版狀態Published - 1 12月 2007
    事件5th Asian Meeting on Ferroelectricity, AMF-5 - Noda, Japan
    持續時間: 3 9月 20067 9月 2006

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