Prediction of abnormal etching profiles in high-aspect-ratio via/hole etching using on-wafer monitoring system

Keyphrases

• Via Hole 100%
• Monitoring System 100%
• Charge Accumulation 100%
• Prediction System 100%
• On-wafer 100%
• Etch Profile 100%
• Hole Etching 100%
• High-aspect Ratio via 100%
• Ion Trajectory 100%
• Prediction Accuracy 50%
• Sidewall 50%
• Effective Tool 50%
• Trajectory Prediction 50%
• Monitoring Method 50%
• Adjacent Holes 50%
• Nanoscale Engineering 50%
• High Aspect Ratio Hole 50%

Engineering

• High Aspect Ratio 100%
• Monitoring System 100%
• Side Wall 50%
• Nanoscale 50%
• Accurate Prediction 50%
• Monitoring Technique 50%