Precise control of threshold voltage in ultra-thin quasi-2D oxide semiconductor based transistors

In recent years, ultra-thin quasi-2D (<4nm) oxide semiconductor (OS)-based transistors are promising for future high performance electronic and photoelectronic. For such applications, precise tuning of doping concentration of semiconductor with a wide tunable window is of critical importance. However, in practical electronic circuits is limited by the relative lack of doping modulation with fine control over wide bandwidths. Here, the doping concentration of ultra-thin OS transistor is precisely tuned over a range, corresponding to a shift of threshold voltage change of more than 10 V using thermal annealing combined with laser illumination. Due to the strong surface effect, the ultra-thin OS would be highly sensitive to ambient atmosphere. The gas absorption process makes us could dramatically change the carrier concentration of OS by introducing laser to the system. This work highlights the importance of tunable threshold voltage and the mechanism of the transition process. The tunability of doping concentration in ultra-thin OS-based transistors opens up a new path toward high performance logic circuits and other practical applications.