Precise control of threshold voltage in ultra-thin quasi-2D oxide semiconductor based transistors

Robert Tseng, Der Hsien Lien*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

In recent years, ultra-thin quasi-2D (<4nm) oxide semiconductor (OS)-based transistors are promising for future high performance electronic and photoelectronic. For such applications, precise tuning of doping concentration of semiconductor with a wide tunable window is of critical importance. However, in practical electronic circuits is limited by the relative lack of doping modulation with fine control over wide bandwidths. Here, the doping concentration of ultra-thin OS transistor is precisely tuned over a range, corresponding to a shift of threshold voltage change of more than 10 V using thermal annealing combined with laser illumination. Due to the strong surface effect, the ultra-thin OS would be highly sensitive to ambient atmosphere. The gas absorption process makes us could dramatically change the carrier concentration of OS by introducing laser to the system. This work highlights the importance of tunable threshold voltage and the mechanism of the transition process. The tunability of doping concentration in ultra-thin OS-based transistors opens up a new path toward high performance logic circuits and other practical applications.

原文English
主出版物標題Low-Dimensional Materials and Devices 2023
編輯Nobuhiko P. Kobayashi, A. Alec Talin, Albert V. Davydov, M. Saif Islam
發行者SPIE
ISBN(電子)9781510665163
DOIs
出版狀態Published - 2023
事件Low-Dimensional Materials and Devices 2023 - San Diego, United States
持續時間: 21 8月 202323 8月 2023

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
12651
ISSN(列印)0277-786X
ISSN(電子)1996-756X

Conference

ConferenceLow-Dimensional Materials and Devices 2023
國家/地區United States
城市San Diego
期間21/08/2323/08/23

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