Power-Up sequence control for MTCMOS designs

Shi Hao Chen*, Youn Long Lin, Chia-Tso Chao

*此作品的通信作者

    研究成果: Article同行評審

    11 引文 斯高帕斯(Scopus)

    摘要

    Power gating is effective for reducing standby leakage power as multi-threshold CMOS (MTCMOS) designs have become popular in the industry. However, a large inrush current and dynamic IR drop may occur when a circuit domain is powered up with MTCMOS switches. This could in turn lead to improper circuit operation. We propose a novel framework for generating a proper power-up sequence of the switches to control the inrush current of a power-gated domain while minimizing the power-up time and reducing the dynamic IR drop of the active domains. We also propose a configurable domino-delay circuit for implementing the sequence. Experimental results based on state-of-the-art industrial designs demonstrate the effectiveness of the proposed framework in limiting the inrush current, minimizing the power-up time, and reducing the dynamic IR drop. Results further confirm the efficiency of the framework in handling large-scale designs with more than 80 K power switches and 100 M transistors.

    原文English
    文章編號6170911
    頁(從 - 到)413-423
    頁數11
    期刊IEEE Transactions on Very Large Scale Integration (VLSI) Systems
    21
    發行號3
    DOIs
    出版狀態Published - 2013

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