Power-enhanced ITO omni-directional reflective AlGaInP LEDs by two-dimensional wavelike surface texturing

Shun Cheng Hsu*, Dong Sing Wuu, Xinhe Zheng, Juh Yuh Su, Ming Feng Kuo, Pin Han, Ray-Hua Horng

*此作品的通信作者

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

An n-side up-type AlGaInP multiple-quantum-well light-emitting diode (LED) has been developed by texturing the current spreading layer utilizing photolithography followed by an anisotropic etching process over n-AlGaInP grown by metalorganic chemical vapor deposition. The GaP-ITO-Ag omni-directional reflective LEDs with the wavelike textured surfaces provide a reasonable improvement in light output power and efficiency over the corresponding conventional structures. The luminous intensity of the surface-textured LED is 1.46 times greater than that of the conventional LED in the normal direction. The output power (at 350 mA) of the surface-textured LED is increased approximately 40% as compared with that of the conventional LED. Additionally, the optical simulation also presents a tendency towards the ray extraction ratio as the size of the wavelike hole changes, confirming a proper formation of pattern size associated with the fabrication process.

原文English
文章編號105013
期刊Semiconductor Science and Technology
23
發行號10
DOIs
出版狀態Published - 1 十月 2008

指紋

深入研究「Power-enhanced ITO omni-directional reflective AlGaInP LEDs by two-dimensional wavelike surface texturing」主題。共同形成了獨特的指紋。

引用此