Potential of enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for using in high-speed and low-power logic applications

Faiz Aizad Fatah; Yueh Chin Lin; Tsung Yun Lee; Kai Chun Yang; Ren Xuan Liu; Jing Ray Chan; Heng-Tung Hsu; Yasuyuki Miyamoto; Edward Yi Chang

doi:10.1149/2.0171512jss

Potential of enhancement mode In_0.65Ga_0.35As/InAs/In_0.65Ga_0.35As HEMTs for using in high-speed and low-power logic applications

Faiz Aizad Fatah, Yueh Chin Lin, Tsung Yun Lee, Kai Chun Yang, Ren Xuan Liu, Jing Ray Chan, Heng-Tung Hsu, Yasuyuki Miyamoto, Edward Yi Chang

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

摘要

In this study, a 60-nm enhancement-mode (E-mode) In_0.65Ga_0.35As/InAs/In_0.65Ga_0.35As high electron mobility transistor (HEMT) was developed, and its potential for use in high-speed and low-power logic applications was investigated. When the E-mode device was biased at a drain-source voltage of 0.5 V, it demonstrated a cutoff frequency of 169 GHz, drain-induced barrier lowering of 70 mV/V, minimum subthreshold swing of 67 mV/decade, and ION/IOFF ratio greater than 1.6 × 10⁴. The high performance of the E-mode device is attributed to the use of a thin barrier layer along with Pt gate sinking technology. These results confirm that E-mode In_0.65Ga_0.35As/InAs/In_0.65Ga_0.35As HEMTs have great potential for use inhigh-speed and low-power logic applications.

原文	English
頁（從 - 到）	N157-N159
期刊	ECS Journal of Solid State Science and Technology
卷	4
發行號	12
DOIs	https://doi.org/10.1149/2.0171512jss
出版狀態	Published - 2015

存取文件

10.1149/2.0171512jss

其它文件與鏈接

Link to publication in Scopus

引用此

@article{28fdb859e9c54df9bfb0822dca7093b7,

title = "Potential of enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for using in high-speed and low-power logic applications",

abstract = "In this study, a 60-nm enhancement-mode (E-mode) In0.65Ga0.35As/InAs/In0.65Ga0.35As high electron mobility transistor (HEMT) was developed, and its potential for use in high-speed and low-power logic applications was investigated. When the E-mode device was biased at a drain-source voltage of 0.5 V, it demonstrated a cutoff frequency of 169 GHz, drain-induced barrier lowering of 70 mV/V, minimum subthreshold swing of 67 mV/decade, and ION/IOFF ratio greater than 1.6 × 104. The high performance of the E-mode device is attributed to the use of a thin barrier layer along with Pt gate sinking technology. These results confirm that E-mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs have great potential for use inhigh-speed and low-power logic applications.",

author = "Fatah, {Faiz Aizad} and Lin, {Yueh Chin} and Lee, {Tsung Yun} and Yang, {Kai Chun} and Liu, {Ren Xuan} and Chan, {Jing Ray} and Heng-Tung Hsu and Yasuyuki Miyamoto and Chang, {Edward Yi}",

year = "2015",

doi = "10.1149/2.0171512jss",

language = "English",

volume = "4",

pages = "N157--N159",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

number = "12",

}

TY - JOUR

T1 - Potential of enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for using in high-speed and low-power logic applications

AU - Fatah, Faiz Aizad

AU - Lin, Yueh Chin

AU - Lee, Tsung Yun

AU - Yang, Kai Chun

AU - Liu, Ren Xuan

AU - Chan, Jing Ray

AU - Hsu, Heng-Tung

AU - Miyamoto, Yasuyuki

AU - Chang, Edward Yi

PY - 2015

Y1 - 2015

N2 - In this study, a 60-nm enhancement-mode (E-mode) In0.65Ga0.35As/InAs/In0.65Ga0.35As high electron mobility transistor (HEMT) was developed, and its potential for use in high-speed and low-power logic applications was investigated. When the E-mode device was biased at a drain-source voltage of 0.5 V, it demonstrated a cutoff frequency of 169 GHz, drain-induced barrier lowering of 70 mV/V, minimum subthreshold swing of 67 mV/decade, and ION/IOFF ratio greater than 1.6 × 104. The high performance of the E-mode device is attributed to the use of a thin barrier layer along with Pt gate sinking technology. These results confirm that E-mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs have great potential for use inhigh-speed and low-power logic applications.

AB - In this study, a 60-nm enhancement-mode (E-mode) In0.65Ga0.35As/InAs/In0.65Ga0.35As high electron mobility transistor (HEMT) was developed, and its potential for use in high-speed and low-power logic applications was investigated. When the E-mode device was biased at a drain-source voltage of 0.5 V, it demonstrated a cutoff frequency of 169 GHz, drain-induced barrier lowering of 70 mV/V, minimum subthreshold swing of 67 mV/decade, and ION/IOFF ratio greater than 1.6 × 104. The high performance of the E-mode device is attributed to the use of a thin barrier layer along with Pt gate sinking technology. These results confirm that E-mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs have great potential for use inhigh-speed and low-power logic applications.

UR - http://www.scopus.com/inward/record.url?scp=84946544532&partnerID=8YFLogxK

U2 - 10.1149/2.0171512jss

DO - 10.1149/2.0171512jss

M3 - Article

AN - SCOPUS:84946544532

SN - 2162-8769

VL - 4

SP - N157-N159

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 12

ER -

Potential of enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for using in high-speed and low-power logic applications

摘要

存取文件

其它文件與鏈接

指紋

引用此

Potential of enhancement mode In_0.65Ga_0.35As/InAs/In_0.65Ga_0.35As HEMTs for using in high-speed and low-power logic applications