Positive bias temperature instability (PBTI) characteristics of contact-etch-stop-layer-induced local-tensile-strained HfO2 nMOSFET

Woei Cherng Wu*, Tien-Sheng Chao, Te Hsin Chiu, Jer Chyi Wang, Chao Sung Lai, Ming Wen Ma, Wen Cheng Lo

*此作品的通信作者

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

The positive bias temperature instability (PBTI) characteristics of contact-etch-stop-layer (CESL)-strained HfO2 nMOSFET are thoroughly investigated. For the first time, the effects of CESL on an HfO2 dielectric are investigated for PBTI characteristics. A roughly 50% reduction of VTH shift can be achieved for the 300-nm CESL HfO2 nMOSFET after 1000-s PBTI stressing without obvious HfO2/Si interface degradation, as demonstrated by the negligible charge pumping current increase (< 4%). In addition, the HfO2 film of CESL devices has a deeper trapping level (0.83 eV), indicating that most of the shallow traps (0.75 eV) in as-deposited HfO2 film can be eliminated for CESL devices.

原文English
頁(從 - 到)1340-1343
頁數4
期刊IEEE Electron Device Letters
29
發行號12
DOIs
出版狀態Published - 8 十二月 2008

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