Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

Tian-Li Wu, Jacopo Franco, Denis Marcon, Brice De Jaeger, Benoit Bakeroot, Xuanwu Kang, Steve Stoffels, Marleen Van Hove, Guido Groeseneken, Stefaan Decoutere

研究成果: Conference contribution同行評審

11 引文 斯高帕斯(Scopus)

摘要

In this paper, positive bias temperature instability (PBTI) in fully recessed gate GaN MIS-FETs is studied by using an eMSM (extended Measure-Stress-Measure) technique, which consists of a set of stress/recovery tests. By using this technique, VTH shift after a stress and the relaxation information can be collected in one experiment. First of all, a typical forward-reverse gate sweep and frequency-dependent conductance method are used to characterize VTH shift and interface state density (Dit) in fully recessed gate MIS-FETs with two different gate dielectrics (PEALD SiN and ALD AhO3), showing that ALD AhO3 has a smaller VTH shift compared with PEALD SiN although the latter has a smaller Dit. Then, an eMSM technique is used to understand the trapping/de-trapping phenomena under stress and relaxation period. The results show a power law dependency of VTH shift with respect to the stress time. Furthermore, the voltage dependency of Vth shift (7) can be extracted, showing that ALD Al2O3 has a higher 7 compared to PEALD SiN. The physical model is proposed to explain the mechanism for the different voltage dependency. On the other hand, the relaxation data is collected as well, indicating that Al2O3 has a faster relaxation even under a high voltage overdrive stress, which is consistent with physical model since accessibility of defects in Al2O3 are located at energies less favorable for channel carriers, compared to SiN.

原文English
主出版物標題2016 International Reliability Physics Symposium, IRPS 2016
發行者Institute of Electrical and Electronics Engineers Inc.
頁面4A21-4A26
ISBN(電子)9781467391368
DOIs
出版狀態Published - 22 9月 2016
事件2016 International Reliability Physics Symposium, IRPS 2016 - Pasadena, United States
持續時間: 17 4月 201621 4月 2016

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
2016-September
ISSN(列印)1541-7026

Conference

Conference2016 International Reliability Physics Symposium, IRPS 2016
國家/地區United States
城市Pasadena
期間17/04/1621/04/16

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