@inproceedings{ab3e5c92974a4959b5e39bf8a0244ee6,
title = "Positioning effect of type-II GaSb/GaAs quantum ring layer on solar cell performances",
abstract = "In this work, we demonstrate the positioning effect of the type-II quantum ring (QR) on the solar cell efficiencies. The QR layer was placed in either p-type or n-type region to test its effect on the performance. Under one Sun condition, the one with p-type QR layer has better efficiency and open-circuit voltage. But this advantage loses quickly when the sunlight is concentrated over 20 times. From the concentrated sunlight measurement, the sample with QR layer in the n-type region can sustain the Voc reduction until 80 Suns.",
author = "Hsu, {Shun Chieh} and Chen, {Yin Han} and Chen, {Hsuan An} and Lin, {Shih Yen} and Shen, {Tien Lin} and Hao-Chung Kuo and Shih, {Cheng Lun} and Sheu, {Jinn Kong} and Chien-Chung Lin",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",
year = "2015",
month = dec,
day = "14",
doi = "10.1109/PVSC.2015.7355811",
language = "English",
series = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",
address = "美國",
}