@inproceedings{fa0c66aa9bc7481495cd54445879c4bb,
title = "Porous materials with ultra-low dielectric constant as antireflective coating layers for F 2 and ArF lithography",
abstract = "In this paper, optical characteristics of porous MSQ were measured for BARC applications. Optical constants of porous MSQ are (1.432, 0.004) and (1.245, 0.454) at 193 and 157 nm, respectively. For 157 nm, the porous MSQ film has suitable optical characteristics as a BARC layer.",
author = "Chen, {H. L.} and Tu, {C. W.} and Wang, {T. J.} and Po-Tsun Liu and Fu-Hsiang Ko and Chung, {T. C.}",
year = "2003",
month = jan,
day = "1",
doi = "10.1109/IMNC.2003.1268606",
language = "English",
series = "Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "122--123",
booktitle = "Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003",
address = "United States",
note = "null ; Conference date: 29-10-2003 Through 31-10-2003",
}