Polymer space-charge-limited transistor as a solid-state vacuum tube triode

Yu Chiang Chao; Ming Che Ku; Wu Wei Tsai; Hsiao-Wen Zan; Hsin-Fei Meng; Hung Kuo Tsai; Sheng Fu Horng

doi:10.1063/1.3513334

Polymer space-charge-limited transistor as a solid-state vacuum tube triode

Yu Chiang Chao, Ming Che Ku, Wu Wei Tsai, Hsiao-Wen Zan^*, Hsin-Fei Meng, Hung Kuo Tsai, Sheng Fu Horng

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30 引文斯高帕斯（Scopus）

摘要

We report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3× 10⁵ at a low operation voltage of 1.5 V by using high quality insulators both above and below the grid base electrode. Applying a greater bias to the base increases the barrier potential, and turns off the channel current, without introducing a large parasitic leakage current. Simulation result verifies the influence of base bias on channel potential distribution. The output current density is 1.7 mA/ cm² with current gain greater than 1000.

原文	English
文章編號	223307
期刊	Applied Physics Letters
卷	97
發行號	22
DOIs	https://doi.org/10.1063/1.3513334
出版狀態	Published - 29 11月 2010

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AU - Chao, Yu Chiang

AU - Ku, Ming Che

AU - Tsai, Wu Wei

AU - Zan, Hsiao-Wen

AU - Meng, Hsin-Fei

AU - Tsai, Hung Kuo

AU - Horng, Sheng Fu

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AB - We report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3× 105 at a low operation voltage of 1.5 V by using high quality insulators both above and below the grid base electrode. Applying a greater bias to the base increases the barrier potential, and turns off the channel current, without introducing a large parasitic leakage current. Simulation result verifies the influence of base bias on channel potential distribution. The output current density is 1.7 mA/ cm2 with current gain greater than 1000.

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Polymer space-charge-limited transistor as a solid-state vacuum tube triode

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