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Polymer as the protecting passivaton layer in fabricating suspended SCS structures in both anisotropic and isotropic etching
Yu Hsin Lin
*
,
Wen-Syang Hsu
*
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機械工程學系
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Keyphrases
Isotropic Etching
100%
Anisotropic Etching
100%
Suspended Microstructures
100%
Passivation Layer
66%
Polymer Passivation
66%
Silica
33%
Silicon Dioxide
33%
Fabrication Methods
33%
Multicrystalline Silicon
33%
Fabrication Parameters
33%
Inductively Coupled Plasma Reactive Ion Etching
33%
Boron Doping
33%
Silicon Structure
33%
Suspended Structure
33%
Micromachining Technique
33%
Open Gap
33%
Sub-micro
33%
Protection Layer
33%
Fabrication Time
33%
Bulk Micromachining
33%
Removal Time
33%
Passivation Time
33%
Deep Trench
33%
Engineering
Anisotropic
100%
Passivation Layer
100%
Simplifies
50%
Passivation
50%
Silicon Single Crystal
50%
Inductively Coupled Plasma
50%
Microscale
50%
Micro Machining
50%
Protection Layer
50%
Fabrication Time
50%
Silicon Dioxide
50%
Material Science
Reactive Ion Etching
100%
Silicon Dioxide
100%
Silicon
100%
Boron
100%
Micromachining
100%
Single Crystal
100%