Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain

Du Zen Peng; Ting Chang Chang; Po Sheng Shih; Hsiao-Wen Zan; Tiao Yuan Huang; Chun Yen Chang; Po-Tsun Liu

doi:10.1063/1.1528727

Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain

Du Zen Peng^*, Ting Chang Chang, Po Sheng Shih, Hsiao-Wen Zan, Tiao Yuan Huang, Chun Yen Chang, Po-Tsun Liu

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

19 引文斯高帕斯（Scopus）

摘要

The fabrication of polycrystalline silicon thin-film transistor (TFT) with self-aligned SiGe raised source/drain (SiGe-RSD) was discussed. The SiGe-RSD regions were grown using ultrahigh vacuum chemical vapor deposition at 550 °C. It was shown that with SiH₄ and GeH₄ gas flow rates of 5 and 2 sccm, the poly-SiGe could be selectively grown upto 100 nm for source drain regions.

原文	English
頁（從 - 到）	4763-4765
頁數	3
期刊	Applied Physics Letters
卷	81
發行號	25
DOIs	https://doi.org/10.1063/1.1528727
出版狀態	Published - 16 12月 2003

存取文件

10.1063/1.1528727

其它文件與鏈接

Link to publication in Scopus

引用此

@article{21341352d86f4316829afcf221bfeff0,

title = "Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain",

abstract = "The fabrication of polycrystalline silicon thin-film transistor (TFT) with self-aligned SiGe raised source/drain (SiGe-RSD) was discussed. The SiGe-RSD regions were grown using ultrahigh vacuum chemical vapor deposition at 550 °C. It was shown that with SiH4 and GeH4 gas flow rates of 5 and 2 sccm, the poly-SiGe could be selectively grown upto 100 nm for source drain regions.",

author = "Peng, {Du Zen} and Chang, {Ting Chang} and Shih, {Po Sheng} and Hsiao-Wen Zan and Huang, {Tiao Yuan} and Chang, {Chun Yen} and Po-Tsun Liu",

year = "2003",

month = dec,

day = "16",

doi = "10.1063/1.1528727",

language = "English",

volume = "81",

pages = "4763--4765",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain

AU - Peng, Du Zen

AU - Chang, Ting Chang

AU - Shih, Po Sheng

AU - Zan, Hsiao-Wen

AU - Huang, Tiao Yuan

AU - Chang, Chun Yen

AU - Liu, Po-Tsun

PY - 2003/12/16

Y1 - 2003/12/16

N2 - The fabrication of polycrystalline silicon thin-film transistor (TFT) with self-aligned SiGe raised source/drain (SiGe-RSD) was discussed. The SiGe-RSD regions were grown using ultrahigh vacuum chemical vapor deposition at 550 °C. It was shown that with SiH4 and GeH4 gas flow rates of 5 and 2 sccm, the poly-SiGe could be selectively grown upto 100 nm for source drain regions.

AB - The fabrication of polycrystalline silicon thin-film transistor (TFT) with self-aligned SiGe raised source/drain (SiGe-RSD) was discussed. The SiGe-RSD regions were grown using ultrahigh vacuum chemical vapor deposition at 550 °C. It was shown that with SiH4 and GeH4 gas flow rates of 5 and 2 sccm, the poly-SiGe could be selectively grown upto 100 nm for source drain regions.

UR - http://www.scopus.com/inward/record.url?scp=0037449318&partnerID=8YFLogxK

U2 - 10.1063/1.1528727

DO - 10.1063/1.1528727

M3 - Article

AN - SCOPUS:0037449318

SN - 0003-6951

VL - 81

SP - 4763

EP - 4765

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain

摘要

存取文件

其它文件與鏈接

指紋

引用此