Poly(3,4ethylenedioxythiophene): Poly(styrenesulfonate)/GaAs hybrid solar cells with 13% power conversion efficiency using front-and back-surface field

C. H. Lin, Kien-Wen Sun, Q. M. Liu, H. Shirai, C. P. Lee

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

Planar hybrid solar cells based on bulk GaAs wafers with a background doping density of 1016 cm-3 and poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) demonstrated an excellent power conversion efficiency of 8.99%. The efficiency of the cell was enhanced to 9.87% with a back-surface field feature using a molecular beam epitaxially grown n-type GaAs epi-layer. The efficiency and fill factor reach 11.86% and 0.8 when an additional p + GaAs epi-layer is deposited on the surface of the solar cells, which provides a front-surface field. The interface between the high-and low-doped regions in the polymer/GaAs and GaAs formed an electric field that introduced a barrier to minority carriers flow to the substrate and effectively reduced front surface carrier recombination, thereby enhancing light-generated free carrier collection efficiency and open-circuit voltage. Compared with the device without the front-and back-surface field, the fill factor and open-circuit voltage of the hybrid solar cell were improved from 0.76 to 0.8 and from 0.68 V to 0.77V, respectively. The highest efficiency reaches a record 13% when the Zonyl fluorosurfactant-treated PEDOT:PSS is used as a holetransporting conducting layer for hybrid cells.

原文English
頁(從 - 到)A1051-A1059
期刊Optics Express
23
發行號19
DOIs
出版狀態Published - 4 八月 2015

指紋

深入研究「Poly(3,4ethylenedioxythiophene): Poly(styrenesulfonate)/GaAs hybrid solar cells with 13% power conversion efficiency using front-and back-surface field」主題。共同形成了獨特的指紋。

引用此