Poly-silicon trap position and pass voltage effects on RTN amplitude in a vertical NAND flash cell string

Y. L. Chou, Ta-Hui Wang*, Mercator Lin, Y. W. Chang, Lenvis Liu, S. W. Huang, W. J. Tsai, T. C. Lu, K. C. Chen, Chih Yuan Lu

*此作品的通信作者

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

We investigate the dependence of random telegraph noise (RTN) on a poly-silicon trap position in a 3D vertical channel and charge-trapping NAND flash cell string. We characterize RTN in read current of each cell of a string at different read and pass voltages. RTN characteristics resulting from a trap in a read cell or in a pass cell are differentiated. A method to identify a poly-silicon trap position in a NAND string is proposed. We perform the 3D TCAD simulation to calculate channel electron density in a string. Measured RTN characteristics can be explained by current-path percolation and channel carrier screening effects. The distribution of RTN amplitudes in NAND strings is characterized.

原文English
文章編號7501605
頁(從 - 到)998-1001
頁數4
期刊IEEE Electron Device Letters
37
發行號8
DOIs
出版狀態Published - 1 八月 2016

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