Polarity dependent breakdown of the high- κsi Ox gate stack: A phenomenological explanation by scanning tunneling microscopy

D. S. Ang, Y. C. Ong, S. J. O'Shea, K. L. Pey, C. H. Tung, T. Kawanago, K. Kakushima, H. Iwai

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5 引文 斯高帕斯(Scopus)

摘要

From scanning tunneling microscopy, we present unambiguous evidence of thermally induced localized conduction paths exhibiting an asymmetrical conduction property in the high- κ gate stack. The tunneling current under gate injection biasing is found to be much larger than that under substrate injection biasing after a 700 °C postdeposition anneal, i.e., the localized paths exhibit a much lower resistance under gate injection biasing. This finding provides a phenomenological explanation for the polarity dependent breakdown of the high- κ gate stack as observed from electrical stressing of large-area metal-oxide-semiconductor capacitors.

原文English
文章編號192904
期刊Applied Physics Letters
92
發行號19
DOIs
出版狀態Published - 2008

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